BLF278 - 300W RF transistor
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.
Price : $130 + $23 shipment
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MRF6V2300 - 300W RF transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed primarily for CW large-signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
Price : $78 + $23 shipment
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MRF173 - 80W RF transistor
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands.
Price : $50 + $15 shipment
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MRF314 - 30W RF transistor
. . . designed primarily for wideband large–signal driver and output amplifier
stages in the 30–200 MHz frequency range.
Output Power = 30 Watts
Price : $40 + $15 shipment