The RF MOSFET Line
RF POWER field effect transistor
N–Channel Enhancement Mode MOSFET
Designed for broadband commercial and military applications up to 200 MHz
frequency range. The high–power, high–gain and broadband performance of
this device make possible solid state transmitters for FM broadcast or TV
channel frequency bands.
• Guaranteed Performance at 150 MHz, 28 V:
Output Power = 80 W
Gain = 11 dB (13 dB Typ)
Efficiency = 55% Min. (60% Typ)
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability
• Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
• Excellent Thermal Stability; Suited for Class A Operation