$130 + $23 EMS Express Shipment
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RF push-pull power MOS transistor

FEATURES:

· High power gain
· Easy power control
· Good thermal stability
· Gold metallization ensures excellent reliability.
APPLICATIONS
· Broadcast transmitters in the VHF frequency range.
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead,
SOT262A1 balanced flange package with two ceramic
caps. The mounting flange provides the common source
connection for the transistors.