N-Channel Enhancement-Mode Lateral MOSFETs
Designed primarily for CW large-signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA,
Pout = 300 Watts, f = 220 MHz
Power Gain . 25.5 dB
Drain Efficiency . 68%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW
Output Power
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 200・・C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.